Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4901967
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- Engineering and Physics Sciences Research Council (EPSRC)
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The effect of oxygen doping (n-type) and oxygen (O)-magnesium (Mg) co-doping (semi-insulating) on the thermal conductivity of ammonothermal bulk GaN was studied via 3-omega measurements and a modified Callaway model. Oxygen doping was shown to significantly reduce thermal conductivity, whereas O-Mg co-doped GaN exhibited a thermal conductivity close to that of undoped GaN. The latter was attributed to a decreased phonon scattering rate due the compensation of impurity-generated strain fields as a result of dopant-complex formation. The results have great implications for GaN electronic and optoelectronic device applications on bulk GaN substrates. (C) 2014 AIP Publishing LLC.
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