Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4874804
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The electron and hole dynamics in low-temperature-grown InGaAs/InAlAs multiple quantum well structures are studied by optical pump-probe transmission measurements for Beryllium (Be) doping levels between 3 x 10(17) cm(-3) and 4 x 10(18) cm(-3). We investigate electron dynamics in the limit cases of unsaturated and completely saturated electron trapping. By expanding a rate equation model in these limits, the details of carrier dynamics are revealed. Electrons are trapped by ionized arsenic antisites, whereas recombination occurs between trapped electrons and holes trapped by negatively charged Be dopants. (C) 2014 AIP Publishing LLC.
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