Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4874851
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Funding
- JSPS [24656402, 22246091, 25249087, 25390055]
- Grants-in-Aid for Scientific Research [25410092, 24656402, 25249087, 26249037] Funding Source: KAKEN
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Anisotropic magnetoresistance (AMR) effect has been systematically iN(V)estigated in various Heusler compounds Co(2)MnZ and Co(2)FeZ (Z = Al, Si, Ge, and Ga) epitaxial films and quantitatively summarized against the total valence electron number N-V. It was found that the sign of AMR ratio is negative when N-V is between 28.2 and 30.3, and turns positive when N-V becomes below 28.2 and above 30.3, indicating that the Fermi level (E-F) overlaps with the valence or conduction band edges of half-metallic gap at N-V similar to 28.2 or 30.3, respectively. We also find out that the magnitude of negative AMR ratio gradually increases with shifting of E-F away from the gap edges, and there is a clear positive correlation between the magnitude of negative AMR ratio and magnetoresistive output of the giant magnetoresistive devices using the Heusler compounds. This indicates that AMR can be used as a facile way to optimize a composition of half-metallic Heusler compounds having a high spin-polarization at room temperature. (C) 2014 AIP Publishing LLC.
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