4.6 Article

Direct laser writing of flexible graphene field emitters

Journal

APPLIED PHYSICS LETTERS
Volume 105, Issue 20, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4902130

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Funding

  1. European Union (European Social Fund-ESF)
  2. Greek national funds through the Operational Program Education and Lifelong Learning of the National Strategic Reference Framework (NSRF)-Research Funding Program: ARCHIMEDES III. Investing in knowledge society through the European Social Fund

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We report on the simple fabrication of highly efficient solution-processable, flexible graphene-based field emission (FE) cathodes via direct laser writing of emitting pixels on reduced graphene oxide (rGO) films deposited onto rGO: poly(3-hexylthiophene) (P3HT) composite layers. Laser processing gives rise to a pronounced vertical alignment of rGO bundles perpendicular to the substrate, while at the same time sharp graphene edges are protruding out of the bundle. The laser-fabricated cathodes exhibit outstanding FE properties with a turn-on field of as low as similar to 0.6 V/mu m and a field enhancement factor of 8900, which are the best reported to date for rGO FE cathodes. At the same time, the cathodes exhibit stable operation under extensive and repetitive bending, a critical requirement for every flexible technology. The flexible and solution-processable, graphene-based, technology developed could be useful for diverse potential applications including field emission displays, biochemical sensors as well as solar cell and battery electrodes. (C) 2014 AIP Publishing LLC.

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