Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4864617
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Funding
- LG Display Co., Ltd.
- National Research Foundation of Korea (NRF) [2012011730]
- Global Frontier R&D Program on Center for Hybrid Interface Materials (HIM) [2013-073298]
- Ministry of Science, ICT & Future Planning
- IT R&D program of MKE/KEIT [10041416]
- Korea Communications Agency (KCA) [R0101-14-0133] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2013M3A6B1078870, 2012R1A2A2A02011730] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We demonstrated the fabrication of flexible amorphous indium gallium zinc oxide thin-film transistors (TFTs) on high-temperature polyimide (PI) substrates, which were debonded from the carrier glass after TFT fabrication. The application of appropriate buffer layers on the PI substrates affected the TFT performance and stability. The adoption of the SiNx/AlOx buffer layers as water and hydrogen diffusion barriers significantly improved the device performance and stability against the thermal annealing and negative bias stress, compared to single SiNx or SiOx buffer layers. The substrates could be bent down to a radius of curvature of 15mm and the devices remained normally functional. (C) 2014 AIP Publishing LLC.
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