Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4880937
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Funding
- NRC
- ASEE
- Office of Naval Research
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It is well-known that the performance of graphene electronic devices is often limited by extrinsic scattering related to resist residue from transfer, lithography, and other processes. Here, we report a polymer-assisted fabrication procedure that produces a clean graphene surface following device fabrication by a standard lithography process. The effectiveness of this improved lithography process is demonstrated by examining the temperature dependence of epitaxial graphene-metal contact resistance using the transfer length method for Ti/Au (10 nm/50 nm) metallization. The Landauer-Buttiker model was used to explain carrier transport at the graphene-metal interface as a function of temperature. At room temperature, a contact resistance of 140 Omega-mu m was obtained after a thermal anneal at 523K for 2 hr under vacuum, which is comparable to state-of-the-art values. (C) 2014 AIP Publishing LLC.
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