Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4902916
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Funding
- Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering
- U.S. Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
- Department of Energy [DE-FG02-06ER46332]
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We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in a superlattice structure of 40 InN quantum wells consisting of one monolayer of InN embedded between 10 nm GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5 x 10(15) cm(-2) (or 1.25 x 10(14) cm(-2) per InN quantum well, assuming all the quantum wells are connected by diffused indium contacts) and 420 cm(2)/Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES. (c) 2014 AIP Publishing LLC.
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