Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4893448
Keywords
-
Categories
Funding
- Ministry of Science and Technology Projects [NSC 102-2221-E-001-032-MY3, NSC 102-2622-E-002-014]
- nano-project founded by Academia Sinica
Ask authors/readers for more resources
Uniform large-size MoS2/graphene hetero-structures fabricated directly on sapphire substrates are demonstrated with layer-number controllability by chemical vapor deposition (CVD). The cross-sectional high-resolution transmission electron microscopy (HRTEM) images provide the direct evidences of layer numbers of MoS2/graphene hetero-structures. Photo-excited electron induced Fermi level shift of the graphene channel are observed on the single MoS2/graphene hetero-structure transistors. Furthermore, double hetero-structures of graphene/MoS2/graphene are achieved by CVD fabrication of graphene layers on top of the MoS2, as confirmed by the cross-sectional HRTEM. These results have paved the possibility of epitaxially grown multi-hetero-structures for practical applications. (C) 2014 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available