Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 26, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4886768
Keywords
-
Categories
Funding
- ONR DEFINE MURI
- NSF
Ask authors/readers for more resources
The in situ metalorganic chemical vapor deposition (MOCVD) of Al2O3 dielectrics on N-face GaN is reported. The near-interface fixed charges are measured by using capacitance-voltage techniques on a metal-oxide-semiconductor (MOSCAP) structure, and the results are compared with those obtained on Ga-face MOSCAPs with the same in situ MOCVD Al2O3 dielectrics. The influence of GaN polarity as well as other possible mechanisms on the formation of fixed charge are identified and discussed. (C) 2014 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available