Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 26, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4885770
Keywords
-
Categories
Funding
- National Basic Research Program of China [2010CB923402, 2013CB922103]
- NSF of China [11222435, 11023002]
- NSF of Jiangsu Province [BK20130054]
Ask authors/readers for more resources
The spin transport in organic spin valve (OSV) devices has been systematically investigated by inserting a low work function material Al between ferromagnetic electrode and organic layer. The resistance and current-voltage curve symmetry are dramatically altered as increasing Al thickness, indicating that an electron-unipolar OSV is obtained. Moreover, the magnetoresistance sign depends on the voltage polarity for certain Al thickness. We attribute this phenomenon to the Fermi and the lowest unoccupied molecular orbits energies of the two electrodes responding to the spin injection and detection, respectively. These findings provide a simple approach to control both the carrier type and the spin direction simultaneously. (C) 2014 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available