Creation of deep blue light emitting nitrogen-vacancy center in nanosized diamond

This paper reports on the formation of complex defect centers related to the N3 center in nanosized diamond by employing plasma immersion and focused ion beam implantation methods. He+ ion implantation into nanosized diamond layer was performed with the aim of creating carbon atom vacancies in the diamond structure, followed by the introduction of molecular N-2(+) ion and heat treatment in vacuum at 750 degrees C to initiate vacancy diffusion. To decrease the sp(2) carbon content of nanosized diamond formed during the implantation processes, a further heat treatment at 450 degrees C in flowing air atmosphere was used. The modification of the bonding properties after each step of defect creation was monitored by Raman scattering measurements. The fluorescence measurements of implanted and annealed nanosized diamond showed the appearance of an intensive and narrow emission band with fine structures at 2.98 eV, 2.83 eV, and 2.71 eV photon energies. (C) 2014 AIP Publishing LLC.