Journal
APPLIED PHYSICS LETTERS
Volume 85, Issue 10, Pages 1692-1694Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1789237
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We have investigated nitrogen incorporation mechanisms in dilute nitride GaAsN alloys grown by plasma-assisted molecular-beam epitaxy. A comparison of nuclear reaction analysis and Rutherford backscattering spectrometry in channeling and nonchanneling conditions reveals significant composition-dependent incorporation of N into nonsubstitutional sites, presumably as either N-N or N-As split interstitials. Furthermore, we identify the (2x1) reconstruction as the surface structure which leads to the highest substitutional N incorporation, likely due to the high number of group V sites per unit area available for N-As surface exchange. (C) 2004 American Institute of Physics.
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