Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4861940
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- BMBF
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The authors report on low-density InAs quantum dots (QDs) grown on AlGaInAs surfaces lattice matched to InP using post-growth annealing by solid-source molecular beam epitaxy. Clearly spatially separated QDs with a dot density of about 5 x 10(8) cm(-2) are obtained by using a special capping technique after the dot formation process. High-resolution micro-photoluminescence performed on optimized QD structures grown on distributed Bragg reflector exhibits single QD emissions around 1.5 mu m with narrow excitonic linewidth below 50 mu eV, which can be used as single photon source in the telecom wavelength range. (C) 2014 AIP Publishing LLC.
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