Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4861862
Keywords
-
Categories
Ask authors/readers for more resources
We report on the fabrication of a GaN nanowire probe for near-field scanning microwave microscopy. A single nanowire was Pt-bonded to a commercial Si cantilever prior to evaporation of a Ti/Al coating to provide a microwave signal pathway. Testing over a microcapacitor calibration sample shows the probe to have capacitance resolution of at least 0.7 fF with improved sensitivity and reduced uncertainty compared with a commercial microwave probe. High wear resistance of the defect-free nanowire enabled it to maintain a tip radius of 150 nm after multiple contact-mode scans while demonstrating nanometer-scale topographical resolution. (C) 2014 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available