Journal
JOURNAL OF PHYSICS-CONDENSED MATTER
Volume 16, Issue 35, Pages S3737-S3748Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0953-8984/16/35/015
Keywords
-
Categories
Ask authors/readers for more resources
InP quantum dots grown on GaInP by the Stranski-Krastanow technique are less well studied than InAs quantum dots grown on GaAs. We here give a review of the main experimental evidence for the InP dots being charged when grown in between n-type barriers.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
