Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4893987
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Funding
- 973 Programs [2013CB932604, 2012CB933403]
- NSF of China [91023026]
- Fundamental Research Funds for Central Universities [NP2013309]
- Jiangsu Innovation Program for Graduate Education [CXLX13_138]
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We show by density functional theory calculations that asymmetric hetero-stacking of Bi2Te3/Sb2Te3 films can modulate the topological surface states. Due to the structure inversion asymmetry, an intrinsic Rashba-like splitting of the conical surface bands is aroused. While such splitting in homogeneous Bi2Te3-class topological insulators can be realized in films with more than three quintuple layers under external electric fields, the hetero-stacking breaks the limit of thickness for preserving the topological nature into the thinnest two quintuple layers. These results indicate that the hetero-stacking can serve as an efficient strategy for spin-resolved band engineering of topological insulators. (C) 2014 AIP Publishing LLC.
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