Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4895782
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Funding
- National Natural Science Foundation of China [51472130]
- Natural Science Foundation of Shandong Province [ZR2011FM010, ZR2012FM020]
- Portuguese Science Foundation (FCT-MEC) [EXCL/CTM-NAN/0201/2012, PEst-C/CTM/LA0025/2013-14]
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In this study, we report high-performance amorphous In2O3/InZnO bilayer metal-oxide (BMO) thin-film transistor (TFT) using an ultra-thin solution-processed amorphous ZrOx dielectric. A thin layer of In2O3 offers a higher carrier concentration, thereby maximizing the charge accumulation and yielding high carrier mobility. A thick amorphous layer of InZnO controls the charge conductance resulting in low off-state current and suitable threshold voltage. As a consequence, the BMO TFT showed higher filed-effect mobility (37.9 cm(2)/V s) than single-layer InZnO TFT (7.6 cm(2)/V s). Apart from that we obtain an on/off current ratio of 10(9), a subthreshold swing voltage of 120 mV/decade, and a voltage shift <= 0.4 V under positive bias stress for 2.5 h, for a gate voltage of 3 V and drain voltage of 1 V. These data demonstrate that the BMO TFT has great potential for a broad range of applications as switching low-power transistors. (C) 2014 AIP Publishing LLC.
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