4.6 Article

Effects of site occupancy and valence state of Fe ions on ferromagnetism in Fe-doped In2O3 diluted magnetic semiconductor

Journal

APPLIED PHYSICS LETTERS
Volume 104, Issue 6, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4865102

Keywords

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Funding

  1. National Natural Science Foundation of China [11174132]
  2. Science Foundation of Henan University of Technology [2012JCYC14]
  3. Doctoral Foundation of Henan University of Technology [2010BS047]
  4. Henan Provincial Key Science and Technology Project [13A140201]
  5. National Key Project for Basic Research [2011CB922102, 2012CB932304]
  6. PAPD, People's Republic of China

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The effects of oxygen vacancies, valence state of Fe ions, and site occupancy of Fe ions on ferromagnetism in Fe-doped In2O3 were investigated both experimentally and theoretically. The Fe3+ ions prefer to occupy the 8b sites and do not contribute to the room temperature (RT) ferromagnetism. It is found that the presence of Fe2+ ions in In2O3 can be induced through the creation of oxygen vacancies. The Fe2+ ions tend to occupy the 24d sites, and the origin of RT ferromagnetism can be related to the strong Fe:4s and Fe:3d hybridization. Our findings not only give a clear picture on the origin of ferromagnetism of Fe-doped In2O3 but also provide a way to tune the magnetic property of Fe-doped In2O3 through the control of valence states of dopant and the control of sites for dopant occupation. (C) 2014 AIP Publishing LLC.

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