Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4862789
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Funding
- National Basic Research Program of China [2011CB302005]
- Natural Science Foundation of China [11074248, 11134009, 10974197, 11374296, 61177040]
- Science and Technology Developing Project of Jilin Province [20111801]
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High Mg-content single-phase wurtzite MgZnO alloys with a bandgap of 4.35 eV have been obtained on sapphire substrate by introducing a composition-gradient MgxZn1-xO buffer layer. By employing the accelerated electrons obtained in a solid-state structure as an excitation source, an emission at around 285 nm, which is originated from the near-band-edge emission of the Mg0.51Zn0.49O active layer, has been observed. The results reported in this paper may provide a promising route to high performance deep-ultraviolet light-emitting devices by bypassing the challenging doping issues of wide bandgap semiconductors. (C) 2014 AIP Publishing LLC.
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