Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4903499
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Funding
- National Natural Science Foundation of China [61405089]
- Innovation of Science and Technology Committee of Shenzhen [JCYJ20140417105742713]
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Transparent conductive electrodes based on hydrogen (H)-doped zinc oxide (ZnO) have been proposed for active-matrix (AM) display applications. When fabricated with optimal H plasma power and optimal plasma treatment time, the resulting ZnO:H films exhibit low sheet resistance of 200 Omega/square and high average transmission of 85% at a film thickness of 150 nm. The demonstrated transparent conductive ZnO:H films can potentially replace indium-tin-oxide and serve as pixel electrodes for organic light-emitting diodes as well as source/drain electrodes for ZnO-based thin-film transistors. Use of the proposed ZnO:H electrodes means that two photomask stages can be removed from the fabrication process flow for ZnO-based AM backplanes. (C) 2014 AIP Publishing LLC.
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