Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4863830
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- National Science Council of Taiwan [100-2112-M-018-003-MY3]
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The fabrication of memory devices based on the Au/pentacene/heavily doped n-type Si (n(+)-Si), Au/pentacene/Si nanowires (SiNWs)/n(+)-Si, and Au/pentacene/H2O2-treated SiNWs/n(+)-Si structures and their resistive switching characteristics were reported. A pentacene memory structure using SiNW arrays as charge storage nodes was demonstrated. The Au/pentacene/SiNWs/n(+)-Si devices show hysteresis behavior. H2O2 treatment may lead to the hysteresis degradation. However, no hysteresis-type current-voltage characteristics were observed for Au/pentacene/n(+)-Si devices, indicating that the resistive switching characteristic is sensitive to SiNWs and the charge trapping effect originates from SiNWs. The concept of nanowires within the organic layer opens a promising direction for organic memory devices. (C) 2014 AIP Publishing LLC.
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