Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4884296
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Funding
- National Science Council of the Republic of China, Taiwan [NSC 101-3113-P-008-008, NSC 102-2221-E-008-111-MY3]
- Asian Office of Aerospace Research Development [FA 2386-14-1-4008]
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Semiconductor Ge quantum-dot (QD) thermometry has been demonstrated based on extraordinary temperature-dependent oscillatory differential conductance (G(D)) characteristics of Ge-QD single-hole transistors (SHTs) in the few-hole regime. Full-voltage width-at-half-minimum, V-1/2, of G(D) valleys appears to be fairly linear in the charge number (n) and temperature within the QD in a relationship of eV(1/2)congruent to(1 - 0.11n) x 5.15k(B)T, providing the primary thermometric quantity. The depth of G(D) valley is also proportional to charging energy (E-C) and 1/T via Delta G(D)congruent to E-C/9.18k(B)T, providing another thermometric quantity. This experimental demonstration suggests our Ge-QD SHT offering effective building blocks for nanothermometers over a wide temperature range with a detection temperature as high as 155K in a spatial resolution less than 10 nm and temperature accuracy of sub-kelvin. (C) 2014 AIP Publishing LLC.
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