Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4864629
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Funding
- Office of Naval Research MURI [N00014-11-1-0690]
- National Science Foundation
- Kwanjeong Educational Foundation
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We report ambipolar field-effect transistors (FETs) consisting of inkjet printed semiconductor bilayer heterostructures utilizing semiconducting single-walled carbon nanotubes (SWCNTs) and amorphous zinc tin oxide (ZTO). The bilayer structure allows for electron transport to occur principally in the amorphous oxide layer and hole transport to occur exclusively in the SWCNT layer. This results in balanced electron and hole mobilities exceeding 2 cm(2) V-1 s(-1) at low operating voltages (<5V) in air. We further show that the SWCNT-ZTO hybrid ambipolar FETs can be integrated into functional inverter circuits that display high peak gain (>10). This work provides a pathway for realizing solution processable, inkjet printable, large area electronic devices, and systems based on SWCNT-amorphous oxide heterostructures. (C) 2014 AIP Publishing LLC.
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