Probing intrinsic transport properties of single metal nanowires: Direct-write contact formation using a focused ion beam

The transport characteristics of 70-nm-diameter platinum nanowires (NWs), fabricated using a pore-templated electrodeposition process and individually contacted using a focused ion beam (FIB) method, are reported. This approach yields nanowire devices with low contact resistances (similar to400 Omega) and linear current-voltage characteristics for current densities up to 65 kA/cm(2). The intrinsic nanowire resistivity (33+/-5 muOmega cm) indicates significant contributions from surface- and grain-boundary scattering mechanisms. Fits to the temperature dependence of the intrinsic NW resistance confirm that grain-boundary scattering dominates surface scattering (by more than a factor of 2) at all temperatures. Our results demonstrate that FIB presents a rapid and flexible method for the formation of low-resistance ohmic contacts to individual metal nanowires, allowing intrinsic nanowire transport properties to be probed. (C) 2004 American Institute of Physics.