Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4871090
Keywords
-
Categories
Funding
- National High Technology Research and Development Program of China [2011AA03A112, 2011AA03A106]
- National Nature Science Foundation [11204360, 61210014]
Ask authors/readers for more resources
The asymmetric dual-wavelength (green/blue) coupled InGaN/GaN multiple quantum wells were proposed to modulate the green emission intensity. Electroluminescent measurements demonstrate the conspicuous increment of the green light intensity by decreasing the coupled barrier thickness. This was partly attributed to capture of more carriers when holes tunnel across the thinner barrier from the blue quantum wells, as a hole reservoir, to the green quantum wells. While lower effective barrier height of the blue quantum wells benefits improved hole transportation from p-GaN to the active region. Efficiency droop of the green quantum wells was partially alleviated due to the enhanced injection efficiency of holes. (C) 2014 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available