Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4891541
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Funding
- Basic Science Research program through the National Research Foundation of Korea - Ministry of Science, ICT & Future Planning [NRF-2014R1A4A1008474]
- National Research Foundation of Korea (NRF) grant - Korea government (MSIP) [NRF-2013R1A2A2A01006404]
- Chung-Ang University Scholarship Grants
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In this report, photo-induced hysteresis, threshold voltage (V-T) shift, and recovery behaviors in photochemically activated solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) are investigated. It was observed that a white light illumination caused negative V-T shift along with creation of clockwise hysteresis in electrical characteristics which can be attributed to photo-generated doubly ionized oxygen vacancies at the semiconductor/gate dielectric interface. More importantly, the photochemically activated IGZO TFTs showed much reduced overall V-T shift compared to thermally annealed TFTs. Reduced number of donor-like interface states creation under light illumination and more facile neutralization of ionized oxygen vacancies by electron capture under positive gate potential are claimed to be the origin of the less V-T shift in photochemically activated TFTs. (C) 2014 AIP Publishing LLC.
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