Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 13, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4870406
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Funding
- National Research Foundation of Korea [22A20130012279] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Persistent photoconductivity (PPC) in nanocrystalline InZnO thin-film transistors (TFTs) was studied using carrier fluctuation measurements and transient analysis. Low-frequency noise measurements and decay kinetics indicate that the band bending by the external field together with the ionized oxygen vacancy (V-o(++)) generated during the light exposure is the main cause of the PPC phenomenon. Based on these observations, a field-induced macroscopic barrier model is proposed as the origin of PPC for InZnO TFTs. In particular, this model explains that the carrier separation between e and V-o(++) is induced by the external field applied to the three electrodes inside the transistor. (C) 2014 AIP Publishing LLC.
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