Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 13, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4897315
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Funding
- Japan Society for the Promotion of Science, Japan [23360143, 12F02818]
- Grants-in-Aid for Scientific Research [23360143, 12F02818] Funding Source: KAKEN
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The stabilization by vacuum annealing of tungsten carbide/p-diamond Schottky barrier diodes (SBDs) has been investigated. The Schottky barrier height (phi(B)) and ideality factor (n), at high temperature, were consistently estimated by employing a vertical SBD structure. An exponential drop of phi(B) in time at 600K and its stabilization at 1.46 eV after 90 min were reported. The lowest n among SBDs examined was close to 1.0 at 600 K. A linear relation between phi(B) and n in a statistical electrical characterization suggests a phi(B) inhomogeneity. (C) 2014 AIP Publishing LLC.
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