Journal
APPLIED PHYSICS LETTERS
Volume 85, Issue 12, Pages 2405-2407Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1792372
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We assess the possibility to use an ambipolar organic light-emitting transistor structure as gain medium for an electrically pumped laser. Singlet and triplet continuity equations are solved together with Poissons and drift-diffusion equations in two dimensions. The solution allows for a detailed balance between the exciton decay, quenching and generation mechanisms. Simulations of a tetracene light-emitting transistor show that triplets are most dominant in quenching singlets. Singlet-triplet quenching can ultimately prevent pure tetracene crystals or films-when provided with a realistic optical feedback structure, to reach the threshold for stimulated emission. (C) 2004 American Institute of Physics.
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