Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4874978
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Funding
- Engineering Doctorate School of Roma TRE University
- NanoNextNL, a micro and nanotechnology consortium of the Government of the Netherlands
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Epitaxial Pb(Mg1/3Nb2/3)O-3-PbTiO3 200 nm thick, (001) oriented, perovskite phase-pure films were grown on a range of PbZr1-xTixO3 buffer layers (x = 0.2-0.8) and sandwiched between SrRuO3 electrodes on (001) SrTiO3 substrates to form a ferroelectric capacitor structure. Devices without a buffer layer or with a buffer layer of highly tetragonal PbZr1-xTixO3 show very large self-bias fields up to 1.0 x 10(7) V/m. These self-bias fields correlate with strain gradient layers near the bottom electrode observed in these devices only. The large self-bias was explained quantitatively in terms of the flexoelectric effect. (C) 2014 AIP Publishing LLC.
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