Related references
Note: Only part of the references are listed.Low resistance Ti Ohmic contacts to 4H-SiC by reducing barrier heights without high temperature annealing
Lingqin Huang et al.
APPLIED PHYSICS LETTERS (2012)
Cleaning of SiC surfaces by low temperature ECR microwave hydrogen plasma
Lingqin Huang et al.
APPLIED SURFACE SCIENCE (2011)
Structure and stoichiometry of (0001) 4H-SiC/oxide interface
Xingguang Zhu et al.
APPLIED PHYSICS LETTERS (2010)
X-ray photoelectron spectroscopy studies of nitridation on 4H-SiC (0001) surface by direct nitrogen atomic source
J. W. Chai et al.
APPLIED PHYSICS LETTERS (2008)
Electronic passivation of 3C-SiC(001) via hydrogen treatment
C. Coletti et al.
ELECTROCHEMICAL AND SOLID STATE LETTERS (2008)
Presence and resistance to wet etching of silicon oxycarbides at the SiO(2)/SiC interface
Silma A. Correa et al.
ELECTROCHEMICAL AND SOLID STATE LETTERS (2008)
Nitrogen passivation of (0001) 4H-SiC silicon-face dangling bonds
G. Pennington et al.
APPLIED PHYSICS LETTERS (2007)
Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen
Sanwu Wang et al.
PHYSICAL REVIEW LETTERS (2007)
Schottky barrier between 6H-SiC and graphite:: Implications for metal/SiC contact formation
Th. Seyller et al.
APPLIED PHYSICS LETTERS (2006)
Surface band bending of a-plane GaN studied by scanning Kelvin probe microscopy
S Chevtchenko et al.
APPLIED PHYSICS LETTERS (2006)
Interface passivation for silicon dioxide layers on silicon carbide
S Dhar et al.
MRS BULLETIN (2005)
Interpretation of Fermi level pinning on 4H-SiC using synchrotron photoemission spectroscopy
SY Han et al.
APPLIED PHYSICS LETTERS (2004)
Study of the interaction of 4H-SiC and 6H-SiC(0001)Si surfaces with atomic nitrogen
M Losurdo et al.
APPLIED PHYSICS LETTERS (2004)
Study of the temperature-dependent interaction of 4H-SiC and 6H-SiC surfaces with atomic hydrogen
M Losurdo et al.
APPLIED PHYSICS LETTERS (2004)
Passivation of hexagonal SiC surfaces by hydrogen termination
T Seyller
JOURNAL OF PHYSICS-CONDENSED MATTER (2004)
Self-ordering of nanofacets on vicinal SiC surfaces
H Nakagawa et al.
PHYSICAL REVIEW LETTERS (2003)
Calculation of electron inelastic mean free paths (IMFPs) VII. Reliability of the TPP-2M IMFP predictive equation
S Tanuma et al.
SURFACE AND INTERFACE ANALYSIS (2003)
Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H-SiC
K McDonald et al.
JOURNAL OF APPLIED PHYSICS (2003)
Mechanisms responsible for improvement of 4H-SiC/SiO2 interface properties by nitridation
VV Afanas'ev et al.
APPLIED PHYSICS LETTERS (2003)
Physical properties of N2O and NO-nitrided gate oxides grown on 4H SiC
P Jamet et al.
APPLIED PHYSICS LETTERS (2001)
Electronic and chemical passivation of hexagonal 6H-SiC surfaces by hydrogen termination
N Sieber et al.
APPLIED PHYSICS LETTERS (2001)
Formation of periodic steps with a unit-cell height on 6H-SiC (0001) surface by HCl etching
S Nakamura et al.
APPLIED PHYSICS LETTERS (2000)