4.6 Article

Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors

Journal

APPLIED PHYSICS LETTERS
Volume 104, Issue 15, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4871802

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Funding

  1. National Key Basic Research Program of China [2011CBA00606]
  2. Program for New Century Excellent Talents in University [NCET-12-0915]
  3. National Natural Science Foundation of China [61334002]

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The mechanism of both reverse and forward gate leakage currents in Al2O3/Al0.55Ga0.45N/GaN structures was studied in this Letter by temperature-dependent current-voltage measurement. Poole-Frenkel (PF) emission, an oxygen vacancy-assisted process, was deduced as the dominant mechanism at high-temperatures (>388 K), and the leakage current at mid-temperatures (<388 K) were found greatly impacted by temperature-independent tunneling current. The reverse PF mission current in low-field, mid-field, and high-field region were related to trap states with activation energy of 0.41 eV, 0.49 eV, and 0.71 eV, respectively, and the activation energy of trap states for forward PF emission current was derived as 0.65 eV. (C) 2014 AIP Publishing LLC.

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