Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4871866
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Funding
- pioneer research center program [2012-0009462]
- Global Frontier R&D Program on Center for Hybrid Interface Materials (HIM) - MOSIP (Ministry of Science, ICT & Future Planning), Korea through the National Research Foundation of Korea [2013-073298]
- Future Semiconductor Device Technology Development Program - MOTIE (Ministry of Trade, Industry Energy), Korea [10044842]
- Korea Semiconductor Research Consortium (KSRC)
- Korea Evaluation Institute of Industrial Technology (KEIT) [10044842] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2013M3A6B1078873, 2012-0009462] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Using the discharge current analysis method, the contribution of charge generation through an interfacial reaction at a graphene /substrate interface is assessed to be on the order of 10(14)/cm(2), which is similar to 20% of the total charging sites. The validity of this method, which separately extracts the density of the charging sites related to the initial defect density of the graphene from the contribution of interfacial reactions is examined by measuring the discharge current of graphene field-effect-transistors at different ambient and temperatures. This method will be crucially instrumental in finding an optimal substrate material for graphene devices. (C) 2014 AIP Publishing LLC.
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