Related references
Note: Only part of the references are listed.Impact of N2 and forming gas plasma exposure on the growth and interfacial characteristics of Al2O3 on AlGaN
Xiaoye Qin et al.
APPLIED PHYSICS LETTERS (2013)
Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces
Ting-Hsiang Hung et al.
APPLIED PHYSICS LETTERS (2013)
AlGaN-GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors With Very High-k Oxynitride TaOxNy Gate Dielectric
Taku Sato et al.
IEEE ELECTRON DEVICE LETTERS (2013)
High-Quality Interface in Al2O3/GaN/AlGaN/GaN MIS Structures With In Situ Pre-Gate Plasma Nitridation
Shu Yang et al.
IEEE ELECTRON DEVICE LETTERS (2013)
Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology
Derek W. Johnson et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
Capacitance–Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface
Chihoko Mizue et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
In situ atomic layer deposition study of HfO2 growth on NH4OH and atomic hydrogen treated Al0.25Ga0.75N
Xiaoye Qin et al.
JOURNAL OF APPLIED PHYSICS (2013)
Characterization of VT-instability in enhancement-mode Al2O3-AlGaN/GaN MIS-HEMTs
Yunyou Lu et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11 (2013)
Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequency-temperature mapping
Hong-An Shih et al.
APPLIED PHYSICS LETTERS (2012)
In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN
Barry Brennan et al.
APPLIED PHYSICS LETTERS (2012)
Fixed charge in high-k/GaN metal-oxide-semiconductor capacitor structures
Junwoo Son et al.
APPLIED PHYSICS LETTERS (2012)
Low-Leakage-Current AlN/GaN MOSHFETs Using Al2O3 for Increased 2DEG
Tongde Huang et al.
IEEE ELECTRON DEVICE LETTERS (2012)
Interfacial chemistry of oxides on InxGa(1-x)As and implications for MOSFET applications
C. L. Hinkle et al.
CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE (2011)
High-Speed AlN/GaN MOS-HFETs With Scaled ALD Al2O3 Gate Insulators
A. L. Corrion et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors
M. Fagerlind et al.
JOURNAL OF APPLIED PHYSICS (2010)
Characterization of AlGaN/GaN metal-oxide-semiconductor field-effect transistors by frequency dependent conductance analysis
P. Kordos et al.
APPLIED PHYSICS LETTERS (2009)
An InGaN/GaN single quantum well improved by surface modification of GaN films
Z. L. Fang et al.
NANOTECHNOLOGY (2009)
Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs
Jinwook W. Chung et al.
IEEE ELECTRON DEVICE LETTERS (2008)
Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode
Yong Cai et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2006)
A study on current collapse in AlGaN/GaN HEMTs induced by bias stress
T Mizutani et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2003)
Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors
T Hashizume et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2003)
AlGaN/GaN HEMTs - An overview of device operation and applications
UK Mishra et al.
PROCEEDINGS OF THE IEEE (2002)
High-κ gate dielectrics:: Current status and materials properties considerations
GD Wilk et al.
JOURNAL OF APPLIED PHYSICS (2001)
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's
BM Green et al.
IEEE ELECTRON DEVICE LETTERS (2000)