Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4862198
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Funding
- National Natural Science Foundation of China [51273020, 90923015]
- Fundamental Research Funds for the Central Universities [FRF-SD-12-005B]
- State Key Lab for Advanced Metals and Materials [2012-ZD05]
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We report the use of silk fibroin as the gate dielectric material in solution-processed organic field-effect transistors (OFETs) with poly(3-hexylthiophene) (P3HT) as the semiconducting layer. Such OFETs exhibit a low threshold of -0.77V and a low-operating voltage (0 to -3 V) compatible with the voltage level commonly-used in current electronic industry. The carrier mobility of such OFETs is as high as 0.21 cm(2) V-1 s(-1) in the saturation regime, comparable to the best value of P3HT-based OFETs with dielectric layer that is not solution-processed. The high-performance of this kind of OFET is related with the high content of beta strands in fibroin dielectric which leads to an array of fibers in a highly ordered structure, thus reducing the trapping sites at the semiconductor/dielectric interface. (C) 2014 AIP Publishing LLC.
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