Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4901719
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Funding
- II-VI Foundation
- U.S. Army Research Laboratory [W911NF-07-2-0046]
- NSF [DMR-1206793, DMR-1206655, DMR-1106070, DMR-1206256]
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We combine nuclear reaction analysis and electrical measurements to study the effect of water exposure (D2O) on the n-type 4H-SiC carbon face (000 (1) over bar) MOS system and to compare to standard silicon based structures. We find that: (1) The bulk of the oxides on Si and SiC behave essentially the same with respect to deuterium accumulation; (2) there is a significant difference in accumulation of deuterium at the semiconductor/dielectric interface, the SiC C-face structure absorbs an order of magnitude more D than pure Si; (3) standard interface passivation schemes such as NO annealing greatly reduce the interfacial D accumulation; and (4) the effective interfacial charge after D2O exposure is proportional to the total D amount at the interface. (C) 2014 AIP Publishing LLC.
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