Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4898135
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Funding
- EC Seventh Framework Programme [264694]
- RTN THREADMILL (EU) [MRTN-CT-2006-036040]
- Career Integration [618247]
- FEDER
- Royal Society
- EPSRC
- Freiburg Institute for Advanced Studies (Junior Research Fellowship)
- Basque Science Foundation for Science (Ikerbasque)
- POLYMAT
- University of the Basque Country
- Gobierno de Espana (Ministerio de Economia y Competitividad) [MAT2012-35826]
- Gobierno Vasco (SPRI-SAIOTEK programme)
- Gobierno Vasco (BERC programme)
- Diputacion Foral de Guipuzcoa
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Electronic processes at the heterojunction between chemically different organic semiconductors are of special significance for devices such as light-emitting diodes (LEDs) and photovoltaic diodes. Here, we report the formation of an exciplex state at the heterojunction of an electron-transporting material, a functionalized hexaazatrinaphthylene, and a hole-transporting material, poly(9,9-dioctylfluorene-alt-N-(4-butylphenyl)diphenylamine) (TFB). The energetics of the exciplex state leads to a spectral shift of similar to 1 eV between the exciton and the exciplex peak energies (at 2.58 eV and 1.58 eV, respectively). LEDs incorporating such bulk heterojunctions display complete quenching of the exciton luminescence, and a nearly pure near-infrared electroluminescence arising from the exciplex (at similar to 1.52 eV) with >98% of the emission at wavelengths above 700 nm at any operational voltage. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
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