Journal
SOLID STATE IONICS
Volume 173, Issue 1-4, Pages 141-145Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.ssi.2004.07.065
Keywords
indium tin oxide; surface; photoemission; stoichiometry
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Thin films of tin doped indium oxide (In2O3:Sn or ITO) were deposited by rf-magnetron sputtering from ceramic In2O3/SnO2 targets. Surface electronic properties were investigated using in situ photoelectron spectroscopy (XPS, UPS). Bulk properties, were analysed using electrical and optical measurements. While for a range of deposition parameters the ITO films clearly show degenerate bulk doping, the surfaces exhibit a Fermi level position well below the conduction band minimum. (C) 2004 Elsevier B.V. All rights reserved.
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