Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4872227
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- EC Project ORAMA
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A model of the negative bias illumination stress instability in InGaZn oxide is presented, based on the photo-excitation of electrons from oxygen interstitials. The O interstitials are present to compensate hydrogen donors. The O interstitials are found to spontaneously form in O-rich conditions for Fermi energies at the conduction band edge, much more easily that in related oxides. The excited electrons give rise to a persistent photoconductivity due to an energy barrier to recombination. The formation energy of the O interstitials varies with their separation from the H donors, which leads to a voltage stress dependence on the compensation. (C) 2014 AIP Publishing LLC.
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