Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4816759
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Funding
- MEXT, Japan [25390071, 25420341, 25706020]
- Grants-in-Aid for Scientific Research [25289093, 25706020, 25420341] Funding Source: KAKEN
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Temperature-dependent cathodoluminescence spectra were measured from (001) unintentionally doped, (100) Si-doped, and (010) Mg-doped beta-Ga2O3 substrates prepared by either the floating zone growth or edge-defined film-fed growth methods. Although beta-Ga2O3 is expected to be an indirect bandgap material, direct Gamma-Gamma transitions were found to be dominant in the optical transmittance spectra. The substrates exhibited no near-band-edge emission and instead exhibited ultraviolet luminescence, blue luminescence (BL), and green luminescence bands. Since the BL intensity strongly depended on the resistivity in the crystals, there was evidence of a correlation between the BL intensity and formation energy of oxygen vacancies. (C) 2013 AIP Publishing LLC.
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