4.6 Article

Voltage tuning of plasmonic absorbers by indium tin oxide

Journal

APPLIED PHYSICS LETTERS
Volume 102, Issue 22, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4809516

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Funding

  1. MRSEC Program of NSF [DMR11-20901]
  2. Penn URF
  3. NSF
  4. Penn Regional Nanotechnology Facility (PRNF), a member of the NSF via the MRSEC program

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We experimentally demonstrate electrical tuning of plasmonic mid-infrared absorber resonances at 4 mu m wavelength. The perfect infrared absorption is realized by an array of gold nanostrip antennas separated from a back reflector by a thin dielectric layer. An indium tin oxide active layer strongly coupled to the optical near field of the plasmonic absorber allows for spectral tunability. (C) 2013 AIP Publishing LLC.

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