4.6 Article

Ion-beam-induced bending of freestanding amorphous nanowires: The importance of the substrate material and charging

Journal

APPLIED PHYSICS LETTERS
Volume 102, Issue 21, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4807663

Keywords

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Funding

  1. National Natural Science Foundation of China [91123004, 11104334, 50825206, 60871045, 10834012]
  2. Outstanding Technical Talent Program of the Chinese Academy of Sciences
  3. National Basic Research Program (973) of China [2009CB930502]
  4. Engineering and Physical Sciences Research Council [EP/J017329/1] Funding Source: researchfish
  5. EPSRC [EP/J017329/1] Funding Source: UKRI

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Ion-beam irradiation offers great flexibility and controllability in the construction of freestanding nanostructures with multiple advanced functionalities. Here, we present and discuss the bending of free-standing nanowires, against, towards, and ultimately parallel to a flux of directional ion irradiation. Bending components both along and perpendicular to the incident ion beam were observed, and the bending behavior was found to depend both on the ion beam scanning strategy and on the conductivity of the supporting substrate. This behavior is explained by an ion-irradiation-related electrostatic interaction. Our findings suggest the prospect of exploiting this technique to engineer 3D nanostructures for advanced applications. (C) 2013 AIP Publishing LLC.

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