4.6 Article

Bottom-up graphene nanoribbon field-effect transistors

Journal

APPLIED PHYSICS LETTERS
Volume 103, Issue 25, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4855116

Keywords

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Funding

  1. Office of Naval Research BRC Program
  2. Helios Solar Energy Research Center
  3. Office of Science, Office of Basic Energy Sciences of the U.S. Department of Energy [DE-AC02-05CH11231]
  4. National Science Foundation [DMR-1206512]
  5. Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy [DE-AC02-05CH11231]
  6. Division Of Materials Research
  7. Direct For Mathematical & Physical Scien [1206512] Funding Source: National Science Foundation

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Recently developed processes have enabled bottom-up chemical synthesis of graphene nanoribbons (GNRs) with precise atomic structure. These GNRs are ideal candidates for electronic devices because of their uniformity, extremely narrow width below 1 nm, atomically perfect edge structure, and desirable electronic properties. Here, we demonstrate nano-scale chemically synthesized GNR field-effect transistors, made possible by development of a reliable layer transfer process. We observe strong environmental sensitivity and unique transport behavior characteristic of sub-1 nm width GNRs. (C) 2013 AIP Publishing LLC.

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