Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4829360
Keywords
-
Categories
Ask authors/readers for more resources
This letter presents the epitaxial growth and characterization of a heterostructure for an electrically injected laser, based on a strained GeSn active well. The elastic strain within the GeSn well can be tuned from compressive to tensile by high quality large Sn content (Si)GeSn buffers. The optimum combination of tensile strain and Sn alloying softens the requirements upon indirect to direct bandgap transition. We theoretically discuss the strain-doping relation for maximum net gain in the GeSn active layer. Employing tensile strain of 0.5% enables reasonable high optical gain values for Ge0.94Sn0.06 and even without any n-type doping for Ge0.92Sn0.08. (C) 2013 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available