Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes

Replacing a portion of the upper III-nitride cladding with indium-tin-oxide (ITO) has several potential advantages for GaN-based laser diodes (LDs). For green LDs, use of ITO in the waveguide structure reduces the epitaxial p-cladding thickness and growth time, which in turn may reduce thermal damage to the active region. We design ITO-clad blue and green semipolar (20 (2) over bar1) LDs using asymmetric InGaN waveguiding layers to center the mode on the active region. Lasing is demonstrated at 471 nm with threshold current density of 6.2 kA/cm(2) for a device with 200 nm p-GaN and at 518 nm for a device with only 300 nm of p-GaN. (C) 2013 AIP Publishing LLC.