p-channel thin-film transistors based on spray-coated Cu2O films

Thin films of cuprous oxide (Cu2O) were grown using solution-based spray pyrolysis in ambient air and incorporated into hole-transporting thin-film transistors. The phase of the oxide was confirmed by X-ray diffraction measurements while the optical band gap of the films was determined to be similar to 2.57 eV from optical transmission measurements. Electrical characterization of Cu2O films was performed using bottom-gate, bottom-contact transistors based on SiO2 gate dielectric and gold source-drain electrodes. As-prepared devices show clear p-channel operation with field-effect hole mobilities in the range of 10(-4)-10(-3) cm(2) V-1 s(-1) with some devices exhibiting values close to 1x10(-2) cm(2) V-1 s(-1). (C) 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4803085]