Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4833315
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Funding
- Singapore Ministry of Education Academic Research Fund Tier 1 [R-263-000-A75-750]
- National Research Foundation of Korea (NRF)
- Korean Government [2012R1A2A1A03006049]
- NSF [DMR-0845464]
- ONR at Rutgers [N000141210456]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0845464] Funding Source: National Science Foundation
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A Bi2Se3 topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged impurities on the transport properties. The conductance modulation with gate bias is due to a change in the carrier concentration, whereas the temperature dependent conductance change is originated from a change in mobility. Large conductance modulation at room temperature along with the transparent optical properties makes topological insulators as an interesting (opto)electronic material. (C) 2013 AIP Publishing LLC.
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