Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 10, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4795595
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Funding
- National Key Basic Research Program of China [2010CB934300, 2011CBA00607, 2011CB9328004]
- National Integrate Circuit Research Program of China [2009ZX02023-003]
- National Natural Science Foundation of China [60906004, 60906003, 61006087, 61076121, 61176122, 61106001]
- Science and Technology Council of Shanghai [11DZ2261000, 1052nm07000, 11QA1407800]
- Chinese Academy of Sciences [20110490761]
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Compared with Ge2Sb2Te5, Ge0.61Sb2Te has higher crystallization temperature (similar to 200.5 degrees C), larger crystallization activation energy (similar to 3.28 eV), and better data retention (similar to 120.8 degrees C for 10 yr). The switching between amorphous and crystalline state could be triggered by the electric pulse of as short as 10 ns. With the resistance ratio of two orders of magnitude, the endurance test was up to 10 6 cycles. Ge0.61Sb2Te material is a promising candidate for the trade-off between programming speed and data retention. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795595]
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