Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4794413
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Funding
- JSPS [24740196]
- MEXT [20110005]
- Grants-in-Aid for Scientific Research [24740196, 20110005] Funding Source: KAKEN
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Sub-picosecond modulation of the optical reflectivity (R) using terahertz electric-field (E-THz) pulses was achieved in a typical one-dimensional Mott insulator, the bromine-bridged nickel compound, [Ni(chxn)(2)Br]Br-2 (chxn: cyclohexanediamine). The reflectivity change (Delta R/R) at around the Mott-gap transition peak (similar to 1.3 eV) was similar to 1% for E-THz similar to 45 kV/cm, and proportional to the square of E-THz. The relaxation time of Delta R/R was under 0.1 ps, enabling optical switching with a high repetition rate in the near-infrared region. The electric-field and probe-energy dependences of Delta R/R demonstrate that the modulation is due to large third-order optical nonlinearity of one-dimensional Mott insulators. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794413]
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