Journal
APPLIED PHYSICS LETTERS
Volume 103, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4815990
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Funding
- JSPS
- Ministry of Education, Culture, Sports, Science and Technology
- Semiconductor Technology Academic Research Center (STARC)
- Grants-in-Aid for Scientific Research [25107004, 24686039] Funding Source: KAKEN
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The density of states (DOS) of graphene underneath a metal is estimated through a quantum capacitance measurement of the metal/graphene/SiO2/n(+)-Si contact structure fabricated by a resist-free metal deposition process. Graphene underneath Au maintains a linear DOS-energy relationship except near the Dirac point, whereas the DOS of graphene underneath Ni is broken and largely enhanced around the Dirac point, resulting in only a slight modulation of the Fermi energy. Moreover, the DOS of graphene in the contact structure is correlated with the contact resistivity measured using devices fabricated by the resist-free process. (C) 2013 AIP Publishing LLC.
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